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Experimental Demonstration of Vpi Reduction in EO Modulators using Modulation Instability

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What
  • Workshops
When May 14, 2014
from 12:00 PM to 01:00 PM
Where Engr. IV Bldg., Tesla Room 53-125
Contact Name
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Department Research Forum
Hosted by: Prof. Bahram Jalali

David Borlaug
Advisor: Prof. Bahram Jalali

         

Abstract

Modulation instability (MI) is a nonlinear physical process whereby tiny disturbances spontaneously grow on an otherwise quiet background.  Past works have been successful in harnessing MI to stimulate optical rogue waves and improve supercontinuum generation.  Motivated by these successes, it has been numerically shown that the MI process is readily stimulated by electrooptic (EO) modulation sidebands.  The result is a drastic reduction in required modulation voltage for intensity modulated analog and RZ signals without compromising dynamic range.  This talk presents experimental demonstration of this technique with quantitative comparison to traditional EO modulators.  Modulator improvement is of critical importance because the impressive development trends of electronics toward low-voltage high-frequency operation have left the modulator as the communication bottleneck.  Traditional electrooptic modulator developments are limited by the tradeoff between low-voltage but low-frequency bulk electrode geometries, and high-frequency but high-voltage travelling wave electrode geometries.  Development of modulators capable of simultaneous low-voltage and high-frequency operation remains elusive.  This talk utilizes a technique whereby an electrooptic booster is inserted following the EO modulator in a canonical optical link.  The booster functions by increasing the modulated sideband power at the expense of the carrier to increase the modulation depth, ultimately enabling low-voltage high-frequency modulation.  In this demonstration an electrooptic modulator's half-wave voltage is experimentally lowered by 10-fold.  Results are reported up to 50 GHz.

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